专利名称：STORAGE TRANSISTOR WITH OPTICAL
ISOLATION
发明人：Yuanwei Zheng,Xianmin Yi,Gang Chen,Duli
Mao,Dyson H. Tai
申请号：US14606416申请日：20150127
公开号：US20160218132A1公开日：20160728
专利附图：
摘要：A storage transistor with a storage region is disposed in a semiconductormaterial. A gate electrode is disposed in a bottom side of an interlayer proximate to the
storage region, and a dielectric layer is disposed between the storage region and thegate electrode. An optical isolation structure is disposed in the interlayer and the opticalisolation structure extends from a top side of the interlayer to the gate electrode. Theoptical isolation structure is also adjoining a perimeter of the gate electrode and
contacts the gate electrode. A capping layer is disposed proximate to the top side of theinterlayer and the capping layer caps a volume encircled by the optical isolationstructure.
申请人：OMNIVISION TECHNOLOGIES, INC.
地址：Santa Clara CA US
国籍：US
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