Bottle-shaped trench and method of fabricating the

专利名称：Bottle-shaped trench and method of

fabricating the same

发明人：Chuan-Chi Chen,Yang-Yao Su申请号：US11267163申请日：20051107

公开号：US20070072388A1公开日：20070329

专利附图：

摘要：Fabrication of a bottle-shaped trench is disclosed. A semiconductor substratewith a trench therein is provided. An ion-doped barrier layer is formed in the trench,exposing the upper portion surfaces of the sidewall of the trench. An ion implantation is

performed on the upper portion surfaces of the sidewall of the trench to reduce theoxidation rate in the substrate near the upper portion of the trench. The ion-dopedbarrier layer is removed, exposing the lower portion and bottom surfaces of the sidewallof the trench. A thermal oxidation treatment is performed, forming an oxide layer on thesurface of the trench. The thickness of the oxide layer on the upper portion of thesidewall surface is much thinner than that of the oxide layer on the lower portion of thesidewall surface or that of the bottom surface. A bottle-shaped trench is formed byremoving the oxide layer.

申请人：Chuan-Chi Chen,Yang-Yao Su

地址：Hinchu County TW,Hsinchu City TW

国籍：TW,TW

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