专利名称：Gap-fill methods
发明人：Jong Keun Park,Cheng-Bai Xu,Phillip D.
Hustad,Mingqi Li
申请号：US14542428申请日：20141114公开号：US09209067B2公开日：20151208
专利附图：
摘要：Provided are gap-fill methods. The methods comprise: (a) providing asemiconductor substrate having a relief image on a surface of the substrate, the reliefimage comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over
the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymerand a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising apolymerized backbone and a crosslinkable group pendant to the backbone; and (c)heating the gap-fill composition at a temperature to cause the polymer to self-crosslink.The methods find particular applicability in the manufacture of semiconductor devices forthe filling of high aspect ratio gaps.
申请人：Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
地址：Marlborough MA US,Midland MI US
国籍：US,US
代理人：Jonathan D. Baskin
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