BC328-16资料

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Amplifier Transistors

PNP Silicon

BC327,-16,-25BC328,-16,-25

MAXIMUM RATINGS

RatingCollector–Emitter VoltageCollector–Base VoltageEmitter–Base VoltageCollector Current — ContinuousTotal Device Dissipation @ TA = 25°CDerate above 25°CTotal Device Dissipation @ TC = 25°CDerate above 25°COperating and Storage JunctionTemperature RangeSymbolVCEOVCBOVEBOICPDPDTJ, TstgBC327–45–50–5.0–8006255.01.512–55 to +150BC328–25–30UnitVdcVdcVdcmAdcmWmW/°CWattmW/°C°C123CASE 29–04, STYLE 17TO–92 (TO–226AA)THERMAL CHARACTERISTICSCharacteristicThermal Resistance, Junction to AmbientThermal Resistance, Junction to CaseSymbolRqJARqJCMax20083.3Unit°C/W°C/WELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(IC = –10 mA, IB = 0)Collector–Emitter Breakdown Voltage(IC = –100 µA, IE = 0)Emitter–Base Breakdown Voltage(IE = –10 mA, IC = 0)Collector Cutoff Current(VCB = –30 V, IE = 0)(VCB = –20 V, IE = 0)Collector Cutoff Current(VCE = –45 V, VBE = 0)(VCE = –25 V, VBE = 0)Emitter Cutoff Current(VEB = –4.0 V, IC = 0)BC327BC328BC327BC328BC327BC328BC327BC328V(BR)CEOVdc–45–25–50–30–5.0———————Vdc———VdcnAdc——————————–100–100nAdc–100–100–100nAdcV(BR)CESV(BR)EBOICBOICESIEBOMotorola Small–Signal Transistors, FETs and Diodes Device Data© Motorola, Inc. 1996 1元器件交易网www.cecb2b.comBC327,-16,-25 BC328,-16,-25ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)CharacteristicSymbolMinTypMaxUnitON CHARACTERISTICSDC Current Gain(IC = –100 mA, VCE = –1.0 V)(IC = –300 mA, VCE = –1.0 V)Base–Emitter On Voltage(IC = –300 mA, VCE = –1.0 V)Collector–Emitter Saturation Voltage(IC = –500 mA, IB = –50 mA)VBE(on)VCE(sat)BC327/BC328BC327–16/BC328–16BC327–25/BC328–25hFE—10010016040————————630250400—–1.2–0.7VdcVdcSMALL–SIGNAL CHARACTERISTICSOutput Capacitance(VCB = –10 V, IE = 0, f = 1.0 MHz)Current–Gain — Bandwidth Product(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)CobfT——11260——pFMHzr(t), NORMALIZED EFFECTIVE TRANSIENTTHERMAL RESISTANCE1.00.70.50.30.20.10.050.070.020.050.030.020.010.001D = 0.50.20.1P(pk)SINGLE PULSE0.01SINGLE PULSEt1t2DUTY CYCLE, D = t1/t20.020.050.10.20.5t, TIME (SECONDS)1.02.05.0θJC(t) = (t) θJCθJC = 100°C/W MAXθJA(t) = r(t) θJAθJA = 375°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) – TC = P(pk) θJC(t)1020501000.0020.0050.01Figure 1. Thermal Response–1000IC, COLLECTOR CURRENT (mA)1.0 s1.0 msTJ = 135°ChFE, DC CURRENT GAIN100 µs1000VCE = –1.0 VTA = 25°CdcTC = 25°C–100dcTA = 25°C100–10–1.0CURRENT LIMITTHERMAL LIMITSECOND BREAKDOWN LIMIT(APPLIES BELOW RATED VCEO)–3.0–10–30VCE, COLLECTOR–EMITTER VOLTAGE–10010–0.1–1.0–10–100IC, COLLECTOR CURRENT (mA)–1000Figure 2. Active Region — Safe Operating AreaFigure 3. DC Current Gain 2Motorola Small–Signal Transistors, FETs and Diodes Device Data元器件交易网www.cecb2b.comBC327,-16,-25 BC328,-16,-25VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)–1.0TJ = 25°C–0.8IC =–500 mAV, VOLTAGE (VOLTS)–0.8–1.0TA = 25°CVBE(sat) @ IC/IB = 10VBE(on) @ VCE = –1.0 V–0.6–0.6–0.4IC = –300 mA–0.20–0.01IC = –10 mA–0.1–1.0–10IB, BASE CURRENT (mA)IC = –100 mA–0.4–0.2VCE(sat) @ IC/IB = 10–1000–1.0–10–100IC, COLLECTOR CURRENT (mA)–1000Figure 4. Saturation RegionFigure 5. “On” VoltagesθV, TEMPERATURE COEFFICIENTS (mV/°C)+1.0θVC for VCE(sat)0100C, CAPACITANCE (pF)Cib10–1.0–2.0θVB for VBECob–1.0–10–100IC, COLLECTOR CURRENT–10001.0–0.1–1.0–10VR, REVERSE VOLTAGE (VOLTS)–100Figure 6. Temperature CoefficientsFigure 7. CapacitancesMotorola Small–Signal Transistors, FETs and Diodes Device Data 3元器件交易网www.cecb2b.comBC327,-16,-25 BC328,-16,-25PACKAGE DIMENSIONSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.DIMENSION F APPLIES BETWEEN P AND L.DIMENSION D AND J APPLY BETWEEN L AND KMINIMUM. LEAD DIMENSION IS UNCONTROLLEDIN P AND BEYOND DIMENSION K MINIMUM.INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0220.0160.0190.0450.0550.0950.1050.0150.0200.500–––0.250–––0.0800.105–––0.1000.115–––0.135–––MILLIMETERSMINMAX4.455.204.325.333.184.190.410.550.410.481.151.392.422.660.390.5012.70–––6.35–––2.042.66–––2.542.93–––3.43–––ARPSEATINGPLANEBFLKDXXHV1JGCNNSECTION X–XDIMABCDFGHJKLNPRVCASE 029–04(TO–226AA)ISSUE ADSTYLE 17:PIN 1.COLLECTOR2.BASE3.EMITTER 4◊Motorola Small–Signal Transistors, FETs and Diodes Device Data