ESM3045DV资料

®ESM3045DV

NPN DARLINGTON POWER MODULE

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HIGH CURRENT POWER BIPOLAR MODULEVERY LOW Rth JUNCTION CASE

SPECIFIED ACCIDENTAL OVERLOADAREAS

ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (ULCOMPLIANT)

EASY TO MOUNT

LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS: sMOTOR CONTROL sSMPS & UPS

sDC/DC & DC/AC CONVERTERSsWELDING EQUIPMENT

ISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVCEVVEBOICICMIBIBMPtotVisolTstgTjParameterCollector-Emitter Voltage (VBE = -5 V)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak Current (tp = 10 ms)Base CurrentBase Peak Current (tp = 10 ms)Total Dissipation at Tc = 25 CInsulation Withstand Voltage (RMS) from AllFour Terminals to Exernal Heatsink Storage TemperatureMax. Operating Junction TemperatureoValue600450724362.551252500-55 to 150150UnitVVVAAAAWVooVCEO(sus)Collector-Emitter Voltage (IB = 0)CCSeptember 2003 1/8

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ESM3045DV

THERMAL DATA

Rthj-caseRthj-caseRthc-hThermal Resistance Junction-case (transistor) MaxThermal Resistance Junction-case (diode) MaxThermal Resistance Case-heatsink With Conductive Grease Applied Max120.05oooC/WC/WC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

SymbolICER #ICEV #IEBO #ParameterCollector Cut-offCurrent (RBE = 5 Ω)Collector Cut-offCurrent (VBE = -5)Emitter Cut-off Current(IC = 0)Test ConditionsVCE = VCEVVCE = VCEV Tj = 100 oCVCE = VCEVVCE = VCEV Tj = 100 oC VEB = 5 VIC = 0.2 A L = 25 mH Vclamp = 450 VIC = 20 A VCE = 5 VIC = 15 A IB = 0.3 AIC = 15 A IB = 0.3 A Tj = 100 oCIC = 20 A IB = 1.2 AIC = 20 A IB = 1.2 A Tj = 100 oCIC = 20 A IB = 1.2 AIC = 20 A IB = 1.2 A Tj = 100 oCVCC = 300 V RC = 0 tp = 3 µsIB1 = 0.45 A Tj = 100 oCVCC = 300 V RC = 20 ΩIB1 = 0.45 A Tj = 100 oCVCC = 300 V RC = 20 ΩIB1 = 0.45 A Tj = 100 oCIC = 15 A VCC = 50 VVBB = -5 V RBB = 0.6 ΩVclamp = 450 V IB1 = 0.3 AL = 0.17 mH Tj = 100 oCICWoff = 24 A IB1 = 1.2 AVBB = -5 V VCC = 50 VL = 0.1 mH RBB = 0.6 ΩTj = 125 oC IF = 20 A Tj = 100 oCVCC = 200 V IF = 20 AdiF/dt = -125 A/µs L < 0.05 µHTj = 100 oC 450125450Min.Typ.Max.1.5171121UnitmAmAmAmAmAVVCEO(SUS)*Collector-EmitterSustaining Voltage(IB = 0)hFE∗VCE(sat)∗DC Current GainCollector-EmitterSaturation Voltage1201.21.31.41.62.12.11604.58223VVVVVVA/µsVVBE(sat)∗diC/dtVCE(3µs)••VCE(5µs)••tstftcVCEWBase-EmitterSaturation VoltageRate of Rise ofOn-state CollectorCollector-EmitterDynamic VoltageCollector-EmitterDynamic VoltageStorage TimeFall TimeCross-over TimeMaximum CollectorEmitter VoltageWithout SnubberDiode Forward VoltageReverse RecoveryCurrent 2.54.5V2.10.150.540.41.2µsµsµsVVF∗IRM1.711214VA∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %# See test circuits in databook introduction

To evaluate the conduction losses of the diode use the following equations:VF = 1.47 + 0.0026 IF P = 1.47 IF(AV) + 0.0026 I2F(RMS)

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ESM3045DV

Safe Operating Areas

Thermal Impedance

Derating Curve

Collector-emitter Voltage Versusbase-emitter Resistance

Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage

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ESM3045DV

Reverse Biased SOA

Foward Biased SOA

Reverse Biased AOAForward Biased AOA

Switching Times Inductive Load

Switching Times Inductive Load VersusTemperature

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ESM3045DV

Dc Current Gain

Typical VF Versus IF

Peak Reverse Current Versus diF/dtTurn-on Switching Test Circuit

Turn-on Switching Waveforms

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ESM3045DV

Turn-on Switching Test Circuit

Turn-off Switching Waveforms

Turn-off Switching Test Circuit of DiodeTurn-off Switching Waveform of Diode

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ESM3045DV

ISOTOP MECHANICAL DATADIM.AA1BCC2DD1EE1E2GG1G2FF1PP1S14.912.63.54.14.64430.1mmMIN.11.88.97.80.751.9537.831.525.1523.8524.815.112.84.34.354.34.430.30.5860.4960.1370.1610.1810.1570.1571.185TYP.MAX.12.29.18.20.852.0538.231.725.524.15MIN.0.4650.3500.3070.0290.0761.4881.2400.9900.9380.9760.5940.5031.1690.1690.1960.1690.1731.193inchTYP.MAX.0.4800.3580.3220.0330.0801.5031.2481.0030.950P093A7/8元器件交易网www.cecb2b.com

ESM3045DV

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics.All other names are the property of their respective owners.© 2003 STMicroelectronics – All Rights reservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.http://www.st.com8/8