High temperature, conductive thin film diffusion b

专利名称：High temperature, conductive thin film

diffusion barrier for ceramic/metal systems

发明人：Mukta S. Farooq,David E. Kotecki,Robert A.

Rita,Stephen M. Rossnagel

申请号：US09031236申请日：19980226公开号：US06178082B1公开日：20010123

专利附图：

摘要：A multilayer ceramic substrate having a thin film structure containing capacitorconnected thereto is provided as an interposer capacitor, the capacitor employing

platinum as the bottom electrode of the capacitor. In a preferred capacitor, a dielectricmaterial such as barium titanate is used as the dielectric material between the capacitorelectrodes. The fabrication of the interposer capacitor requires an in-situ or postdeposition high temperature anneal and the use of such dielectrics requires heating ofthe capacitor structure in a non-reducing atmosphere. A layer of a high temperature, thinfilm diffusion barrier such as TaSiN on the lower platinum electrode between theelectrode and underlying multilayer ceramic substrate prevents or minimizes oxidizationof the metallization of the multilayer ceramic substrate to which the thin film structure isconnected during the fabrication process. A method is also provided for fabricating aninterposer capacitor with a multilayer ceramic substrate base and a thin film multilayerstructure having at least one capacitor comprising at least one bottom platinumelectrode.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理机构：DeLio & Peterson LLC

代理人：John J. Tomaszewski,Aziz M. Ahsan

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