专利名称：Encapsulation of conductive lines of
semiconductor devices
发明人：Ihar Kasko,Kia-Seng Low,John P. Hummel申请号：US10898858申请日：20040726公开号：US07087438B2公开日：20060808
专利附图：
摘要：The invention relates to a method of encapsulating conductive lines ofsemiconductor devices and a structure thereof. An encapsulating protective material,such as TaN, Ta, Ti, TiN, or combinations thereof is disposed over conductive lines of a
semiconductor device. The encapsulating protective material protects the conductivelines from harsh etch chemistries when a subsequently deposited material layer ispatterned and etched. The encapsulating protective material is conductive and may beleft remaining in the completed semiconductor device. The encapsulating material ispatterned using a masking material, and processing of the semiconductor device is thencontinued. The masking material may be left remaining in the structure as part of asubsequently deposited insulating material layer.
申请人：Ihar Kasko,Kia-Seng Low,John P. Hummel
地址：Mennecy FR,Hopewell Junction NY US,Verbank NY US
国籍：FR,US,US
代理机构：Slater & Matsil, L.L.P.
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