®
IRF640S
N-CHANNEL200V-0.150Ω-18ATO-263
MESHOVERLAY™MOSFET
TYPEIRF640S
ssss
VDSS200V
RDS(on)<0.18Ω
ID18A
TYPICALRDS(on)=0.150Ω
EXTREMELYHIGHdv/dtCAPABILITYVERYLOWINTRINSICCAPACITANCESGATECHARGEMINIMIZED
3
DESCRIPTION
ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.
1
D2PAKTO-263(suffix”T4”)
APPLICATIONS
sHIGHCURRENTSWITCHING
sUNINTERRUPTIBLEPOWERSUPPLY(UPS)sDC/DCCOVERTERSFORTELECOM,
INDUSTRIAL,ANDLIGHTINGEQUIPMENT.
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolVDSVDGRVGSIDIDIDM(•)Ptotdv/dt(1)TstgTj
Parameter
Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage
DrainCurrent(continuous)atTc=25oCDrainCurrent(continuous)atTc=100oCDrainCurrent(pulsed)
TotalDissipationatTc=25CDeratingFactor
PeakDiodeRecoveryvoltageslopeStorageTemperature
Max.OperatingJunctionTemperature
o
Value200200±201811721251.05-65to150
150
(1)ISD≤18A,di/dt≤300A/µs,VDD≤V(BR)DSS,Tj≤TJMAX
UnitVVVAAAWW/oCV/ns
oo
CC
(•)Pulsewidthlimitedbysafeoperatingarea
September19991/8
元器件交易网www.cecb2b.com
IRF640S
THERMALDATA
3.12
Rthj-caseRthj-ambRthc-sink
Tl
ThermalResistanceJunction-caseMaxThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose
1.062.50.5300
C/WoC/Wo
C/WoC
o
AVALANCHECHARACTERISTICS
SymbolIAREAS
Parameter
AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)
SinglePulseAvalancheEnergy
o
(startingTj=25C,ID=IAR,VDD=50V)
MaxValue
18280
UnitAmJ
ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
BreakdownVoltage
TestConditions
ID=250µA
VGS=0
Min.200
110±100
Typ.
Max.
UnitVµAµAnA
ZeroGateVoltageVDS=MaxRatingDrainCurrent(VGS=0)VDS=MaxRatingGate-bodyLeakageCurrent(VDS=0)
VGS=± 20V
Tc=125C
o
ON(∗)
SymbolVGS(th)RDS(on)ID(on)
Parameter
GateThresholdVoltageVDS=VGSStaticDrain-sourceOnResistance
OnStateDrainCurrent
VGS=10V
TestConditionsID=250µAID=9A
18Min.2
Typ.30.15
Max.40.18
UnitVΩA
VDS>ID(on)xRDS(on)maxVGS=10V
DYNAMIC
Symbolgfs(∗)CissCossCrss
Parameter
Forward
TransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance
TestConditions
VDS>ID(on)xRDS(on)maxVDS=25V
f=1MHz
ID=9AVGS=0
Min.3
Typ.4120020060
156026080Max.
UnitSpFpFpF
2/8
元器件交易网www.cecb2b.com
IRF640S
ELECTRICALCHARACTERISTICS(continued)SWITCHINGON
Symboltd(on)trQgQgsQgd
Parameter
Turn-onTimeRiseTime
TotalGateChargeGate-SourceChargeGate-DrainCharge
TestConditions
VDD=100VID=9ARG=4.7 ΩVGS=10V(seetestcircuit,figure3)VDD=160V
ID=18A
VGS=10V
Min.
Typ.1327551021
Max.173572
UnitnsnsnCnCnC
SWITCHINGOFF
Symboltr(Voff)tftc
Parameter
Off-voltageRiseTimeFallTime
Cross-overTime
TestConditions
VDD=160VID=18ARG=4.7 ΩVGS=10V(seetestcircuit,figure5)
Min.
Typ.212550
Max.273265
Unitnsnsns
SOURCEDRAINDIODE
SymbolISDISDM(•)VSD(∗)trrQrrIRRM
Parameter
Source-drainCurrentSource-drainCurrent(pulsed)
ForwardOnVoltageReverseRecoveryTime
ReverseRecoveryCharge
ReverseRecoveryCurrent
ISD=18A
VGS=0
2401.815
ISD=18Adi/dt=100A/µs
o
Tj=150CVDD=50V
(seetestcircuit,figure5)
TestConditions
Min.
Typ.
Max.18721.5
UnitAAVnsµCA
(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)Pulsewidthlimitedbysafeoperatingarea
SafeOperatingAreaThermalImpedance
3/8
元器件交易网www.cecb2b.com
IRF640S
OutputCharacteristics
TransferCharacteristics
TransconductanceStaticDrain-sourceOnResistance
GateChargevsGate-sourceVoltageCapacitanceVariations
4/8
元器件交易网www.cecb2b.com
IRF640S
NormalizedGateThresholdVoltagevsTemperature
NormalizedOnResistancevsTemperature
Source-drainDiodeForwardCharacteristics
5/8
元器件交易网www.cecb2b.com
IRF640S
Fig.1:UnclampedInductiveLoadTestCircuit
Fig.1:UnclampedInductiveWaveform
Fig.3:SwitchingTimesTestCircuitsForResistiveLoad
Fig.4:GateChargetestCircuit
Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes
6/8
元器件交易网www.cecb2b.com
IRF640S
TO-263(D2PAK)MECHANICALDATA
mm
MIN.
AA1BB2CC2DEGLL2L3
4.42.490.71.140.451.218.95104.88151.271.4
TYP.
MAX.4.62.690.931.70.61.369.3510.45.2815.851.41.75
MIN.0.1730.0980.0270.0440.0170.0470.3520.3930.1920.5900.0500.055
inchTYP.
MAX.0.1810.1060.0360.0670.0230.0530.3680.4090.2080.6240.0550.068
DIM.
D
A
A2DETAIL”A”
A1
B2
BG
C
C2DETAIL”A”
E
L2
L
L3
P011P6/E
7/8
元器件交易网www.cecb2b.com
IRF640S
Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.
TheSTlogoisatrademarkofSTMicroelectronics
©1999STMicroelectronics–PrintedinItaly–AllRightsReserved
STMicroelectronicsGROUPOFCOMPANIES
Australia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia-Malta-Morocco-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-U.S.A.
8/8
http://www.st.com
.
因篇幅问题不能全部显示，请点此查看更多更全内容