专利名称：Method and circuit for switching a
memristive device in an array
发明人：Wei Yi,Muhammad Shakeel
Qureshi,Frederick Perner,Richard Carter
申请号：US13884140申请日：20110131公开号：US08971091B2公开日：20150303
专利附图：
摘要：A method of switching a memristive device in a two-dimensional array senses aleakage current through the two-dimensional array when a voltage of half of a switching
voltage is applied to a row line of the memristive device. A leakage compensation currentis generated according to the sensed leakage current, and a switching current ramp isalso generated. The leakage compensation current and the switching current ramp arecombined to form a combined switching current, which is applied to the row line of thememristive device. When a resistance of the memristive device reaches a target value, thecombined switching current is removed from the row line.
申请人：Wei Yi,Muhammad Shakeel Qureshi,Frederick Perner,Richard Carter
地址：Mountain View CA US,Santa Clara CA US,Santa Barbara CA US,Los Altos CA US
国籍：US,US,US,US
代理机构：Van Cott, Bagley, Cornwall & McCarthy PC
代理人：Steven L. Nichols
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