专利名称：Apparatus and method for improving
uniformity in batch processing ofsemiconductor wafers
发明人：Kevin G. Donohoe申请号：US08/904746申请日：19970801公开号：US06030902A公开日：20000229
摘要：A novel batch processing system used, for example, in plasma etching andchemical vapor deposition, wherein the pressure in the reactor is cycled through a varyingpressure to increase the transfer of the reactant materials to the center of the wafer.One version of the invention provides a method that includes the steps of (i) feedingreactant gases into a reaction vessel, (ii) exhausting unused reactive gases and/or reactionby-products from the reaction vessel, and (iii) cycling the pressure in the reaction vesselbetween a higher pressure P. sub.high and a lower pressure P.sub.low. Another version ofthe invention provides an apparatus that comprises (i) a reaction vessel, (ii) a feed meansfor feeding reactive gases into the reaction vessel, (iii) an exhaust means for exhaustingunused reactive gases and/or reaction by- products from the reaction vessel, and (d) apressure control means for cycling the pressure in the reaction vessel between a higherpressure P. sub.high and a lower pressure P.sub.low. In one aspect of the invention, thehigher pressure P.sub.high is maintained for a predetermined period of time T.sub.highand the lower pressure P.sub.low is maintained for a predetermined period of timeT.sub.low.
申请人：DONOHOE; KEVIN G.
代理机构：Ormiston Korfanta & Holland, PLLC
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