Quantum well multijunction photovoltaic cell

专利名称：Quantum well multijunction photovoltaic

cell

发明人：Roger J. Chaffin,Gordon C. Osbourn申请号：US06/834670申请日：19860228公开号：US04688068A公开日：19870818

摘要：A monolithic, quantum well, multilayer photovoltaic cell comprises a p- njunction comprising a p-region on one side and an n- region on the other side, each ofwhich regions comprises a series of at least three semiconductor layers, all p-type in thep-region and all n- type in the n- region; each of said series of layers comprisingalternating barrier and quantum well layers, each barrier layer comprising a

semiconductor material having a first bandgap and each quantum well layer comprising asemiconductor material having a second bandgap when in bulk thickness which isnarrower than said first bandgap, the barrier layers sandwiching each quantum well layerand each quantum well layer being sufficiently thin that the width of its bandgap isbetween said first and second bandgaps, such that radiation incident on said cell andabove an energy determined by the bandgap of the quantum well layers will beabsorbed and will produce an electrical potential across said junction.

申请人：THE UNITED STATES OF AMERICA AS REPRESENTED BY THE DEPARTMENT OFENERGY

代理人：George H. Libman,Judson R. Hightower

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