专利名称：ESD PROTECTION FOR HIGH VOLTAGE
APPLICATIONS
发明人：Jian-Hsing LEE,Deng-Shun Chang申请号：US12113803申请日：20080501
公开号：US20080233686A1公开日：20080925
专利附图：
摘要：An electrostatic discharge (ESD) protection device includes a diode located in asubstrate and an N-type metal oxide semiconductor (NMOS) device located in thesubstrate adjacent the diode, wherein both the diode and the NMOS are coupled to an
input device, and at least a portion of the diode and at least a portion of the NMOSdevice collectively form an ESD protection device.
申请人：Jian-Hsing LEE,Deng-Shun Chang
地址：Hsin-Chu TW,Kaohsiung City TW
国籍：TW,TW
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