SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRC

专利名称：SILICON NITRIDE SUBSTRATE AND SILICON

NITRIDE CIRCUIT BOARD USING THE SAME

发明人：Noritaka NAKAYAMA,Katsuyuki

AOKI,Takashi SANO

申请号：US15027829申请日：20141021

公开号：US20160251223A1公开日：20160901

专利附图：

摘要：A silicon nitride substrate including silicon nitride crystal grains and a grainboundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a

sectional structure of the silicon nitride substrate, a ratio (TT) of a total length T of thegrain boundary phase in a thickness direction with respect to a thickness T of the siliconnitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean valuewhen measured by a four-terminal method in which electrodes are brought into contactwith a front and a rear surfaces of the substrate is 20% or less. The dielectric strengthmean value of the silicon nitride substrate can be 15 kV/mm or more. According to abovestructure, there can be obtained a silicon nitride substrate and a silicon nitride circuitboard using the substrate in which variation in the dielectric strength is decreased.

申请人：KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.

地址：Tokyo JP,Yokohama-Shi JP

国籍：JP,JP

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