Magnetoresistive random-access memory device

专利名称：Magnetoresistive random-access memory

device

发明人：Hiroshi Yoshida,Kazunori Sato申请号：US10518391申请日：20030611

公开号：US20060177947A1公开日：20060810

专利附图：

摘要：Disclosed is a new type of magnetoresistive random-access memory (MRAM)device using a magnetic semiconductor, which is capable of achieving high-integration andenergy saving in a simplified structure without any MOS transistor, based on a

rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic

ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor andat least one atomic layer of nonmagnetic insulator interposed therebetween, or arectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layerof nonmagnetic insulator.

申请人：Hiroshi Yoshida,Kazunori Sato

地址：Hyogo JP,Osaka JP

国籍：JP,JP

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