专利名称：Chemically assisted mechanical cleaning of
MRAM structures
发明人：Katrina Mikhaylichenko,Michael Ravkin申请号：US10404403申请日：20030331公开号：US07067016B1公开日：20060627
专利附图：
摘要：A method for post-etch cleaning of a substrate with MRAM structures and MJTstructures and materials is disclosed. The method includes inserting the substrate into afirst brush box configured for double-sided mechanical cleaning of the substrate. A non-
HF, copper compatible chemistry is introduced into the first brush box for cleaning theactive and backside surfaces of the substrate. The substrate is then inserted into asecond brush box which is also configured to provide double-sided mechanical cleaningof the active and backside surfaces of the substrate. A burst of chemistry is introducedinto the second brush box followed by a DIW rinse. The substrate is then processedthrough an SRD apparatus for final rinse and dry.
申请人：Katrina Mikhaylichenko,Michael Ravkin
地址：San Jose CA US,Sunnyvale CA US
国籍：US,US
代理机构：Martine Penilla & Gencarella, LLP
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