SUM40N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
20
FEATURES
ID (A)a
40a40arDS(on) (W)
0.012 @ VGS = 10 V0.026 @ VGS = 4.5 V
Qg (Typ)
757.5
D
DDDTrenchFETr Power MOSFET175_C Junction Temperature
Optimized for High-Side Synchronous Rectifier100% Rg Tested
APPLICATIONS
DDesktop or Server CPU CoreDGame Station
TO-263
D
DRAIN connected to TAB
GDSG
Top View
SOrdering Information:SUM40N02-12P
SUM40N02-12P—E3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source VoltageGate-Source Voltage
Continuous Drain Current (TJ = 175_C)Pulsed Drain CurrentMaximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_CTA = 25_C dTC = 25_CTC = 100_C
Symbol
VDSVGSIDIDMPDTJ, Tstg
Limit
20\"2040a40a9083c3.75−55 to 175
Unit
V
A
W_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mounted)dJunction-to-Case
Notes
a.Package limited.b.Duty cycle v 1%.
c.See SOA curve for voltage derating.
d.When mounted on 1” square PCB (FR-4 material).
Symbol
RthJARthJC
Limit
401.8
Unit
_C/W
Document Number: 72111S-42351—Rev. D, 20-Dec-04
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SUM40N02-12P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown VoltageGate-Threshold VoltageGate-Body Leakage
V(BR)DSSVGS(th)IGSS
VDS = 0 V, ID = 250 mAVDS = VGS, ID = 250 mAVDS = 0 V, VGS = \"20 VVDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain CurrentgOn-State Drain Currenta
IDSSID(on)
VDS = 20 V, VGS = 0 V, TJ = 125_CVDS = 20 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 VVGS = 10 V, ID = 20 A
Drain-Source On-State ResistanceDrainSource OnState Resistancea
rDS(on)
VGS = 10 V, ID = 20 A, TJ = 125_CVGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 15 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 20 A
10
0.021
90
0.0095
0.0120.01750.0220.026
SW
200.85
2
3\"100150250
AmAVnA
SymbolTest ConditionMinTypMaxUnit
Dynamicb
Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotal Gate ChargebGate-Source ChargebGate-Drain ChargebGate ResistanceTurn-On Delay TimebRise Timeb
Turn-Off Delay TimebFall Timeb
CissCossCrssQgQgsQgdRgtd(on)trtd(off)tf
VDD = 10 V, RL = 0.25 W
ID^ 40 A, VGEN = 10 V, Rg = 2.5 W
1.5
VDS = 10 V, , VGS = 4.5 V, I,D = 40 AVGS = 0 V, VDS = 10 V, f = 1 MHz
10003701807.53.52.63.01110249
5.120153515
nsW
12
nCpF
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous CurrentPulsed CurrentForward VoltageaReverse Recovery TimePeak Reverse Recovery CurrentReverse Recovery Charge
ISISMVSDtrrIRMQrr
IF= 40 A, di/dt = 100 A/msIF= 40 A, VGS = 0 V
1.1200.70.007
40901.5401.10.022
AVnsAmC
Notes
a.Pulse test; pulse width v300 ms, duty cycle v2%.b.Independent of operating temperature.
c.Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect device reliability.
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Document Number: 72111S-42351—Rev. D, 20-Dec-04
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SUM40N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Output Characteristics906 V75ID− Drain Current (A)6045301500
2
4
6
8
10
VDS − Drain-to-Source Voltage (V)
4 VVGS = 10 thru 7 VID− Drain Current (A)756045301500
1
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)25_C90TC = −55_CTransfer Characteristics5 V125_C3 VTransconductance
50
0.0400.035
rDS(on)− On-Resistance (W)40
gfs− Transconductance (S)TC = −55_C0.0300.0250.0200.0150.0100.005
00
10
20
30
40
50
0.000
0
On-Resistance vs. Drain Current30
25_C125_CVGS = 4.5 V20
VGS = 10 V10
153045607590
ID − Drain Current (A)ID − Drain Current (A)
1500
Capacitance
10
VDS = 10 VID = 40 AGate Charge
1200
C − Capacitance (pF)Ciss900
VGS− Gate-to-Source Voltage (V)8
6
600
Coss300
Crss4
2
00
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
Document Number: 72111S-42351—Rev. D, 20-Dec-04
00
2
4
6
8
10
12
14
16
Qg − Total Gate Charge (nC)
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SUM40N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.8
On-Resistance vs. Junction Temperature
100
VGS = 10 VID = 20 AIS− Source Current (A)Source-Drain Diode Forward Voltage
rDS(on) − On-Resiistance(Normalized)1.6
1.4
10
TJ = 150_C1.2
TJ = 25_C1.0
0.8−50−25025507510012515017510
0.30.60.91.2
TJ − Junction Temperature (_C)VSD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
30
28
V(BR)DSS(V)ID = 250 mA26
24
22
20
−50
−250255075100125150175
TJ − Junction Temperature (_C)
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Document Number: 72111S-42351—Rev. D, 20-Dec-04
元器件交易网www.cecb2b.com
SUM40N02-12P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
501000*Limitedby rDS(on)Safe Operating Area
40ID− Drain Current (A)ID− Drain Current (A)10010, 100 ms1 ms10 msdc, 100 ms301020101TC = 25_CSingle Pulse00255075100125150175TC − Ambient Temperature (_C)0.10.1110100VDS − Drain-to-Source Voltage (V)*VGS u minimum VGS at which rDS(on) is specified21
Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.1
0.02Single Pulse0.05Normalized Thermal Transient Impedance, Junction-to-Case0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology andPackage Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seehttp://www.vishay.com/ppg?72111.Document Number: 72111S-42351—Rev. D, 20-Dec-04
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