75N75-TM3-T资料

UNISONIC TECHNOLOGIES CO., LTD 75N75 75Amps, 75Volts N-CHANNEL POWER MOSTFET 󰂄 DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1Power MOSFET TO-2511TO-2521TO-220 󰂄 FEATURES * RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1TO-220F*Pb-free plating product number: 75N75L󰂄 SYMBOL 2.Drain1.Gate3.Source 󰂄 ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 75N75-TA3-T 75N75L-TA3-T TO-220 Tube G D S 75N75-TF3-T 75N75L-TF3-T TO-220F Tube G D S 75N75-TM3-T 75N75L-TM3-T TO-251 Tube G D S 75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel 75N75-TN3-T 75N75L-TN3-T TO-252 Tube G D S Note: Pin Assignment: G: Gate D: Drain S: Source 75N75L-TA3-T(1)Packing Type(2)Package Type(3)Lead Plating(1) T: Tube, R: Tape Reel(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN3: TO-252(3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd. 1 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLRATINGS UNITDrain to Source Voltage VDSS 75 V TC = 25󰄊 75 A ID Continuous Drain Current TC = 100󰄊 56 A Drain Current Pulsed (Note 1) IDM 300 A ±20 Gate to Source Voltage VGS V Single Pulsed󰀁(Note 2)EAS 900 mJ Avalanche Energy mJ Repetitive (Note 1) EAR 300 Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25󰄊 220 W Total Power Dissipation PD Derating above 25󰄊 1.4 W/󰄊 Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 THERMAL DATA PARAMETER SYMBOLMIN TYP MAX UNIT 󰄊/W Thermal Resistance Junction-Ambient θJA 62.5 󰄊/W Thermal Resistance Junction-Case θJC 0.8 󰄊/W Thermal Resistance Case-Sink θCS 0.5 󰂄 ELECTRICAL CHARACTERISTICS (TC = 25󰄊, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MINTYP MAX UNITOff Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 75 V Breakdown Voltage Temperature I = 1mA, 󰂶BVDSS/△TJD 0.08 V/󰄊Coefficient Referenced to 25󰄊 VDS = 75 V, VGS = 0 V 20 µA Drain-Source Leakage Current IDSS VDS = 75 V, VGS = 0 V, 250 µA TJ = 150󰄊 Gate-Source Leakage Current VGS = 20V, VDS = 0 V 100 nA IGSS Gate-Source Leakage Reverse VGS = -20V, VDS = 0 V -100 nA On Characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State RDS(ON) VGS = 10 V, ID = 48 A 12.5 15 mΩ Resistance Dynamic Characteristics Input Capacitance CISS 3300 pF VGS = 0 V, VDS = 25 V Output Capacitance COSS 530 pF f = 1MHz Reverse Transfer Capacitance CRSS 80 pF Switching Characteristics Turn-On Delay Time tD(ON) 12 ns Rise Time tR VDD = 38V, ID =48A, 79 ns VGS=10V, (Note 4, 5) Turn-Off Delay Time tD(OFF) 80 ns Fall Time tF 52 ns Total Gate Charge QG 90 140 nC VDS = 60V, VGS = 10 V Gate-Source Charge QGS 20 35 nC ID = 48A, (Note 4, 5) 30 45 nC Gate-Drain Charge (Miller Charge) QGD www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MINTYP MAX UNITSource-Drain Diode Ratings and Characteristics Continuous Source Current IS 75 A Pulsed Source Current ISM 300 Diode Forward Voltage VSD IS = 48A, VGS = 0 V 1.4 V IS = 48A, VGS = 0 V Reverse Recovery Time trr 90 ns dIF / dt = 100 A/µs Reverse Recovery Charge Qrr 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25󰄊 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25󰄊 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 TEST CIRCUITS AND WAVEFORMS D.U.T.+VDS-+-LRGDriverSame Type as D.U.T.*dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under TestVDDVGSFig. 1A Peak Diode Recovery dv/dt Test Circuit VGS(Driver)PeriodP.W.D=P. W.PeriodVGS=10VIFM, Body Diode Forward CurrentISD(D.U.T.)IRMBody Diode Reverse Currentdi/dtBody Diode Recovery dv/dtVDS(D.U.T.)VDDBody Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 TEST CIRCUITS AND WAVEFORMS (Cont.) VDSVGSRGVGS10%tD(ON)tRtD(OFF)tFRLVDDVDS90%10VPulse Width≤ 1󰇄sDuty Factor≤0.1%D.U.T. Fig. 2A Switching Test Circuit 󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁󰀁 Fig. 2B Switching Waveforms 50kΩ12V0.2󰇄F0.3󰇄FSame Type as D.U.T.10VVDSQGSQGQGDVGSDUT1mAVGCharge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform LVDSBVDSSRDVDDD.U.T.10VtpIAStpTime Fig. 4A Unclamped Inductive Switching Test Circuit 󰀁󰀁󰀁Fig. 4B Unclamped Inductive Switching Waveforms www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 5 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 TYPICAL CHARACTERISTICS On-State Characteristics VGSTop: 15V 10V 8V2 7V10 6V 5.5V5VBottorm: 4.5VTransfer CharacteristicsDrain Current, ID(A)Drain Current, ID(A)25℃1014.5V101150102℃Note:1. VDS=25V 2.20µs Pulse Test1002456789103Gate-Source Voltage, VGS(V)10010-11010Drain-Source Voltage, VDS(V) 01 Drain-Source On-Resistance, RDS(ON) (mΩ)15

On-Resistance Variation vs. Drain

Current and Gate VoltageReverseDrain Current, ISD(A)Reverse Drain Current vs. Allowable Case

Temperature10214

13

VGS=10V150℃10125℃*Note:1. VGS=0V 2.250µs Test1.6

12

11

0102030405060708090100

Drain Current, ID(A)

1000.20.40.60.81.01.21.4

Source-Drain Voltage, VSD(V)

60005000Gate-to-Source Voltage, VGS(V) Capacitance Characteristics(Non-Repetitive)CISS=CGS+CGD(CDS=shorted)COSS=CDS+CGDCRSS=CGDCISSGate Charge Characteristics1210864200*Note: ID=48A51015202530354045Total Gate Charge, QG(nC)VDS=38VVDS=60VCapacitance (pF)4000300020001000COSS0CRSS*Note:1. VGS=0V 2.f = 1MHz5101520253035Drain-Source Voltage, VDC(V) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 6 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET 󰂄 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Junction TemperatureOn-Resistance Variation vs. Junction TemperatureDrain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) 1.23.02.52.01.51.00.51.11.0*Note: 1. VGS=0V2. ID=250µA-500501001502000.9*Note: 1. VGS=10V2. ID=3.5A0.8-100Junction Temperature, TJ(℃)0.0-100-50050100150200Junction Temperature, TJ(℃) Maximum Drain Current vs. Case TemperatureMaximum Safe Operating 100Operation in This Area by RDS(ON)7060Drain Current , ID,(A)Drain Current, ID(A)10100µs10msDC1ms5040302010025507510012515010.11*Note:1. Tc=25℃2. TJ=150℃3.Single Pulse 101001000Drain-Source Voltage, VD(V)Case Temperature, TC(℃) Transient Thermal Response CurveThermal Response, ZθJC(t)1D=0.50.20.10.10.050.020.01Single pulse*Note:1. ZθJC (t) = 0.88℃/W Max.2. Duty Factor, D=t1/t23.TJ -TC=PDM×ZθJC(t) 0.011011E-51E-41E-30.010.1Square Wave Pulse Duration, t1 (sec) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 7 of 8 QW-R502-097,A 元器件交易网www.cecb2b.com

75N75 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 8 of 8 QW-R502-097,A