sot23-6封装的双MOS

TXY8205

Dual N CHANNEL High Density Trench MOSFETTYPE BV DSS R DS(ON)I D25m?@VGS=4.5V6ATXY8205 20V40m?@VGS=2.5V5AGreen ProductPIN DESCRIPTION

FEATURES

High Density cell trench design for low Rds(on)Rugged and reliableSurface Mount package

Lead Free Available(Green Product)ABSOLUTE MAXIMUM RATINGSUnit Symbol Parameter Value

V DSS Drain-Source Voltage ( V GS=0V )20 VV GSS Gate- source Voltage±12V V

I D (a) Drain Current (continuous) at T C = 25 ℃ 6 AI D Drain Current (continuous) at T C = 100 ℃ 2.4 AI DM (b) Drain Current (pulsed)24 A

Ptot Total Dissipation at T C = 25　℃ 1.25 WTemperatureTstg Storage- 55~175 ℃

Tj Max. Operating Junction Temperature(a) Current limited by package

(b) Pulse width limited by safe operating areaTHERMAL DATA

Rthj-amb Thermal Resistance Junction-ambient Max 100 ℃ / W

ELECTRICAL CHARACTERISTICS (T case = 25 ℃ unless otherwise specified)OFFSymbolParameterTest Conditions

Min Typ Max Unit BV DSS Drain-sourceBreakdown VoltageI D = 250 uA , V GS = 0V20VI DSS

Zero Gate Voltage Drain Current (V GS = 0V)V DS = 16V 1 uA I GSS Current (V DS = 0V)V GS =± 12V±100nAONSymbolParameterTest Conditions

Min Typ Max Unit V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250uA 0.5 0.7 1.2 V V GS = 4.5V , I D =6A 23 25 m ?R DS(on)

Static Drain-source On ResistanceV GS = 2.5V , I D =5A3440m ?DYNAMICSymbolParameterTest ConditionsMinTypMaxUnit

Ciss Input Capacitance 595 PF Coss Output Capacitance 140 PF Crss Reverse Transfer CapacitanceV DS = 10V , f = 1 MHz , V GS=0V125 PF

ELECTRICAL CHARACTERISTICS (continued)SWITCHING ONSymbol ParameterTest ConditionsMin Typ Max Unittd ( on )

Turn-on Delay Time3.5

ns tr Rise Time V DD =10V , I D = 6A , Rg=3? V GS =4.5V13.5 ns QgTotal Gate Charge21nc

Qgs Gate-Source Charge 1.3 nc Qgd Gate-Drain ChargeV DD = 10V , I D =6 A , V GS = 4.5V 3.3 ncSWITCHING OFFSymbol ParameterTest ConditionsMin Typ Max Unit td (off)

Turn-off Delay Time32

ns tf Fall Time

V DD = 10V , I D =6A , Rg=3? V GS =4.5V6.6ns

SOURCE DRAIN DIODESymbol ParameterTest ConditionsMin Typ Max UnitIS

Continuous source-drain diode currentT C = 25℃

6 A Trr Body diode reverse recovery Time14nSQrr

Body diode reverse recovery chargeIF=6A , di/dt = 100A/us , Tj=25℃5 nCVSD

Forward On VoltageISD =1.0 A , V GS = 0V0.781.2V