Vishay Semiconductors
Surface Mount ESD Protection Diodes
FEATURES
•••••
17249
1220278•••
20279MARKING (example only)
XYBar = cathode marking
Y = type code (see table below)X = date code
•••••
For surface mounted applicationsLow-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines inaccordance with IEC 61000-4-2 (IEC 801-2)
Ideal for EFT protection of data lines inaccordance with IEC 61000-4-4 (IEC 801-4)ESD-protection acc. IEC 61000-4-2± 30 kV contact discharge± 30 kV air discharge
Low incremental surge resistance, excellent clampingcapability
200 W peak pulse power capability with a 10/1000 µswaveform, repetition rate (duty cycle): 0.01 %
Very fast response time High temperature soldering guaranteed: 260 °C/10 s atterminalse3-Sn
AEC-Q101 qualified
Compliant to RoS directive 2002/95/EC and inaccordance to WEEE 2002/96/EC
ORDERING INFORMATION
SMF5V0A-GSxxGS08 = 3K per 7\" reel (8 mm tape), 30K/boxGS18 = 10K per 13\" reel (8 mm tape), 50K/boxPart numberPACKAGE DATA
DEVICE NAMESMF5V0ASMF6V5ASMF7V0ASMF7V5ASMF8V0ASMF8V5ASMF9V0ASMF10ASMF11ASMF12ASMF13ASMF14ASMF15ASMF16ASMF17ASMF18ASMF20ASMF22ASMF24A
SMF
PACKAGE
TYPE CODE
NAME
AEAKAMAPARATAVAXAZBEBGBKBMBPBRBTBVBXBZ
Document Number: 85811Rev. 2.5, 22-Sep-10
For technical questions, contact: ESDprotection@vishay.comwww.vishay.com
1
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
WEIGHT
MOLDING COMPOUND FLAMMABILITY
RATING
MOISTURE SENSITIVITY
SOLDERING CONDITIONS
LEVEL
SMF5V0A to SMF51A
Vishay Semiconductors
PACKAGE DATA
DEVICE NAMESMF26ASMF28ASMF30ASMF33ASMF36ASMF40ASMF43ASMF45ASMF48ASMF51A
SMF
PACKAGE
TYPE CODE
NAME
CECGCKCMCPCRCTCVCXCZ
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
WEIGHT
MOLDING COMPOUND FLAMMABILITY
RATING
MOISTURE SENSITIVITY
SOLDERING CONDITIONS
LEVEL
Surface Mount ESD Protection
Diodes
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETERPeak pulse currentPeak pulse power
Peak forward surge currentESD immunityThermal resistanceForward clamping voltageOperating temperatureStorage temperature
TEST CONDITIONS
tp = 10/1000 µs waveform acc. IEC 61000-4-5tp = 10/1000 µs waveform acc. IEC 61000-4-5tp = 8/20 µs waveform acc. IEC 61000-4-5
8.3 ms single half sine-wave
Contact discharge acc. IEC 61000-4-2; 10 pulsesAir discharge acc. IEC 61000-4-2; 10 pulsesMounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads ( ≥ 40 µm thick)
IF = 12 AJunction temperature
SYMBOLIPPMPPPIFSMVESDRthJAVFTJTSTG
VALUEsee “Electrical Characteristics”
200100020± 30± 301803.5- 55 to + 150- 55 to + 150
UNITAWWAkVkVK/WV°C°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE MAXIMUM REVERSE
REVERSE REVERSE
TEST PEAK PULSECLAMPING CAPACITANCEPROTECTION BREAKDOWN
WORKING CURRENT
PATHSCURRENTVOLTAGE at VR = 0 V, CURRENT VOLTAGE
at VRWMVOLTAGE
at IPPM tp = 10/1000 sat IT, tp ≤ 5 msf = 1 MHzVBR MIN.
(V)
SMF5V0ASMF6V0ASMF6V5ASMF7V0ASMF7V5ASMF8V0ASMF8V5ASMF9V0ASMF10ASMF11ASMF12ASMF13ASMF14ASMF15ASMF16ASMF17A
6.406.677.227.788.338.899.441011.112.213.314.415.616.717.818.9
IT (mA)10101010111111111111
VRWM(V)566.577.588.591011121314151617
IR (µA)40040025010050251052.52.52.511111
IPPM(A)21.719.417.916.715.514.713.913.511.81110.19.38.68.27.77.2
VC (V)9.210.311.21212.913.614.415.41718.219.921.523.224.42627.6
CD TYP.(pF)10301010850750730670660620570460440420370350340310
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For technical questions, contact: ESDprotection@vishay.comDocument Number: 85811
Rev. 2.5, 22-Sep-10
Nchannel
1111111111111111
PART NUMBER
SMF5V0A to SMF51A
Surface Mount ESD Protection
Diodes
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE MAXIMUM REVERSE
REVERSE REVERSE
TEST PEAK PULSECLAMPING CAPACITANCEPROTECTION BREAKDOWN
WORKING CURRENT
PATHSCURRENTVOLTAGE at VR = 0 V, CURRENT VOLTAGE
at VRWMVOLTAGE
at IPPM tp = 10/1000 sat IT, tp ≤ 5 msf = 1 MHzVBR MIN.
(V)
SMF18ASMF20ASMF22ASMF24ASMF26ASMF28ASMF30ASMF33ASMF36ASMF40ASMF43ASMF45ASMF48ASMF51A
2022.224.426.728.931.133.336.74044.447.85053.356.7
IT (mA)11111111111111
VRWM(V)1820222426283033364043454851
IR (µA)11111111111111
IPPM(A)5.86.25.65.14.84.44.13.83.43.12.92.82.62.4
VC (V)29.232.435.538.942.145.448.453.358.164.569.472.777.482.4
CD TYP.(pF)305207265240225210205190180165160155150145
Nchannel
11111111111111
PART NUMBER
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10IPPM - Peak Pulse Current, % IRSMPPP - Peak Pulse Power (kW)Non-repetitive pulsewaveform shown in fig. 3TA = 25 °C150tr=10 µsTJ = 25 °Cpulse width (td) isdefined as the point where the peak currentdecays to 50 % of IPPM100Peak valueIPPMHalf valueIPPMIPPM215010/100 s waveformas defined by R.E.A.0.10.1 µs1.0 µs10 µs100 µs1.0 ms10 ms17250
td - Pulse Width (s)
17252
td00 1 2 3 4t-Time (ms)
Fig. 1 - Peak Pulse Power Rating
Peak Pulse Power (PPP) or Current (IPPM)Derating in Percentage (%)100
Fig. 3 - Pulse Waveform
75
50
25
0
0255075100 125 150 175 200
17251TA - Ambient Temperature
Fig. 2 - Pulse Derating Curve
Document Number: 85811Rev. 2.5, 22-Sep-10
For technical questions, contact: ESDprotection@vishay.comwww.vishay.com
3
SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection
Diodes
PACKAGE DIMENSIONS in millimeters (inches): SMF
0.85 (0.033)0.35 (0.014)0.25 (0.010)0.05 (0.002)0.1 (0.004)51.9 (0.075)1.7 (0.067)1.2 (0.047)0.8 (0.031)0 (0.000) Detail Z enlarged2.9 (0.114)2.7 (0.106)3.9 (0.154)3.5 (0.138)Foot print recommendation:1.08 (0.043)0.88 (0.035)1.3 (0.051)1.3 (0.051)Created - Date: 15. February 2005Rev. 3 - Date: 13. March 2007Document no.:S8-V-3915.01-001 (4)172471.4 (0.055)2.9 (0.114)5
www.vishay.com4
For technical questions, contact: ESDprotection@vishay.comDocument Number: 85811
Rev. 2.5, 22-Sep-10
SMF5V0A to SMF51A
Surface Mount ESD Protection
Diodes
BLISTERTAPE DIMENSIONS in millimeters (inches)
Vishay Semiconductors
PSDocument-No.: S8-V-3717.02-001 (3)18513
Document Number: 85811Rev. 2.5, 22-Sep-10
For technical questions, contact: ESDprotection@vishay.comwww.vishay.com
5
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Vishay
Disclaimer
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Document Number: 91000Revision: 11-Mar-11
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