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FDD3510H Dual N & P-Channel PowerTrench® MOSFETElectrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
BVDSS∆BVDSS ∆TJIDSSIGSS
Drain to Source Breakdown VoltageBreakdown Voltage TemperatureCoefficient
Zero Gate Voltage Drain CurrentGate to Source Leakage Current
ID =250µA, VGS = 0VID = -250µA, VGS = 0V
ID = 250µA, referenced to 25°CID = -250µA, referenced to 25°CVDS = 64V, VGS = 0VVDS = -64V, VGS = 0VVGS = ±20V, VDS = 0V
Q1Q2Q1Q2Q1Q2Q1Q2
80-80
84-67
V
mV/°C1-1±100±100
µAnAnA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ
Gate to Source Threshold VoltageGate to Source Threshold VoltageTemperature Coefficient
VGS = VDS, ID = 250µAVGS = VDS, ID = -250µAID = 250µA, referenced to 25°CID = -250µA, referenced to 25°CVGS = 10V, ID = 4.3A VGS = 6.0V, ID = 4.1A
VGS = 10V, ID = 4.3A, TJ = 125°C VGS = -10V, ID = -2.8A VGS = -4.5V, ID = -2.6A
VGS = -10V, ID = -2.8A, TJ = 125°C VDD = 10V, ID = 4.3AVDD = -5V, ID = -2.8A
Q1Q2Q1Q2 Q1
2.0-1.0
2.6-1.6-6.74.66470121153184259156.8
4.0-3.0
V
mV/°C8088152190224322
rDS(on)
Static Drain to Source On ResistancemΩ
Q2Q1Q2
gFS
Forward TransconductanceS
Dynamic Characteristics
CissCossCrssRg
Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceGate Resistance
Q1
VDS = 40V, VGS = 0V, f = 1MHZQ2
VDS = -40V, VGS = 0V, f = 1MHZf = 1MHz
Q1Q2Q1Q2Q1Q2Q1Q2
600660565027251.77.2
80088075704140
pFpFpFΩ
Switching Characteristics
td(on)trtd(off)tfQg(TOT)QgsQgd
Turn-On Delay TimeRise Time
Turn-Off Delay TimeFall Time
Total Gate Charge Gate to Source ChargeGate to Drain “Miller” Charge
Q1
VDD = 40V, ID = 4.3A, VGS = 10V, RGEN = 6ΩQ2
VDD = -40V, ID = -2.8A, VGS = -10V, RGEN = 6Ω
Q1
VGS = 10V, VDD = 40V, ID = 4.3A Q2
VGS = -10V, VDD = -40V, ID = -2.8A
Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2
762316252513142.31.93.22.9
13111010294010101820
nsnsnsnsnCnCnC
FDD3510H Rev.C
2
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETElectrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VSDtrrQrr
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
Source to Drain Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge
VGS = 0V, IS = 2.6A (Note 2)VGS = 0V, IS = -2.6A (Note 2)Q1
IF = 4.3A, di/dt = 100A/sQ2
IF = -2.8A, di/dt = 100A/s
Q1Q2Q1Q2Q1Q2
0.8-0.82930
1.2-1.246484548
VnsnC
2830
Q1
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
Q2
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V.
FDD3510H Rev.C
3
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted20NORMALIZEDDRAIN TO SOURC E ON-RESISTANCEVGS = 10VID, DRAIN C URRENT (A)VGS = 6VVGS = 4.5V4.03.53.02.52.01.51.00.50510ID, DRAIN CURRENT(A) 15VGS = 6VVGS = 4VVGS = 4.5VVGS = 3.5VPULSE DURATION = 80µsDUTY CYCLE = 0.5%MAX15PULSE DURATION = XµsDUTY CYCLE = X%MAX10VGS = 4V5VGS = 3.5VVGS = 10V00123VDS, DRAIN TO SOURCE VOLTAGE (V) 420Figure 1. On Region CharacteristicsFigure 2. Normalized On-Resistance vs Drain Current and Gate Voltage300SOURCE ON-RESISTANCE (mΩ)2.2NORMALIZED DRAIN TO SOURC E ON-RESISTANCE2.01.81.61.41.21.00.80.60.4-75ID = 4.3AVGS = 10V ID = 4.3APULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXrDS(on), DRAIN TO 200TJ = 125oC100TJ = 25oC-50-250255075100125150TJ, JUNCTION TEMPERATURE (oC)0246810 VGS, GATE TO SOURCE VOLTAGE (V)Figure 3. Normalized On Resistance vs Junction Temperature20IS, REVERSE DRAIN CURRENT (A)PULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXFigure 4. On-Resistance vs Gate to Source Voltage2010VGS = 0VID, DRAIN C URRENT (A)15VDS = 5V1TJ = 150oCTJ = 25oC10TJ = 150oCTJ = 25oC0.1TJ = -55oC5TJ = -55oC 4560.010230.0010.00.20.40.60.81.01.2VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer CharacteristicsFigure 6. Source to Drain Diode Forward Voltage vs Source Current FDD3510H Rev.C 4
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted10VGS, GATE TO SO URCE VOLTAGE(V)ID = 4.3A1000CissCAPACITANCE (pF)VDD = 40V86VDD = 30VVDD = 50V100420 Cossf = 1MHzVGS = 0VCrss02468101214100.1110100Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge CharacteristicsFigure 8. Capacitance vs Drain to Source Voltage15ID, DRAIN CURRENT (A)5IAS, AVALANCHE CURRENT(A)43TJ = 25oC12VGS = 10V9VGS = 6V 2TJ = 125oC63RθJC = 3.5C/Wo10.010.11100255075100o125150tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (C)Figure 9. Unclamped Inductive Switching Capability50P(PK), PEAK TRANSIENT POWER (W)Figure 10. Maximum Continuous Drain Current vs Case Temperature105VGS = 10VID, DRAIN CURRENT (A)10100usTHIS AREA IS LIMITED BY rDS(on)1041103SINGLE PULSERθJC = 3.5oC/WTC = 25oCSINGLE PULSETJ = MAX RATED1ms10ms100msDC 1020.10.050.51RθJC = 3.5C/WTC = 25oCo10VDS, DRAIN to SOURCE VOLTAGE (V) 10010-61010-510-410-310-210-11t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power DissipationFDD3510H Rev.C 5
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted21DUTY CYCLE-DESCENDING ORDERNORMALIZED THERMAL IMPEDANCE, ZθJC0.1D = 0.5 0.2 0.1 0.05 0.02 0.01PDMt1t2NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJC x RθJc + TC0.01SINGLE PULSERθJC = 3.5C/Wo0.001-61010-510-410-310-210-11t, RECTANGULAR PULSE DURATION (sec)Figure 13. Transient Thermal Response Curve 21NORMALIZED THERMAL IMPEDANCE, ZθJADUTY CYCLE-DESCENDING ORDER0.1D = 0.5 0.2 0.1 0.05 0.02 0.01SINGLE PULSERθJA = 96C/W(Note 1b)oPDM0.01t1t2NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJA x RθJA + TA0.001-41010-310-210-11101001000t, RECTANGULAR PULSE DURATION (sec)Figure 14. Transient Thermal Response Curve FDD3510H Rev.C 6
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted10VGS = -10V-ID, DRAIN C URRENT (A)VGS = -4.5VVGS = -3.5VPULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXNORMALIZEDDRAIN TO SOURC E ON-RESISTANCE2.5VGS = -2.5VVGS = -3V864202.0VGS = -3.5V1.5VGS = -4.5VVGS = -3V1.0PULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXVGS = -10VVGS = -2.5V0123450.50246810-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A) Figure 15. On- Region CharacteristicsFigure 16. Normalized on-Resistance vs Drain Current and Gate Voltage 6002.0NORMALIZED DRAIN TO SOURC E ON-RESISTANCE SOURCE ON-RESISTANCE (mΩ)1.81.61.41.21.00.80.60.4-75ID = -2.8AVGS = -10V ID = -2.8A500400300200100PULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXrDS(on), DRAIN TO TJ = 125oCTJ = 25oC-50-250255075100125150TJ, JUNCTION TEMPERATURE (oC)246810 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 17. Normalized On-Resistance vs Junction TemperatureFigure 18. On-Resistance vs Gate to Source Voltage10-IS, REVERSE DRAIN CURRENT (A)10PULSE DURATION = 80µsDUTY CYCLE = 0.5%MAXVGS = 0V-ID, DRAIN C URRENT (A)864VDS = -5V1TJ = 150oC0.1TJ = 25oCTJ = 150oC 200.01TJ = -55oCTJ = 25oCTJ = -55oC123450.0010.00.20.40.60.81.01.2-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode Forward Voltage vs Source CurrentFDD3510H Rev.C 7
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted10-VGS, GATE TO SO URCE VOLTAGE(V)ID = -2.8A1000CissCAPACITANCE (pF)VDD = -40V86VDD = -30VVDD = -50V100Coss420 f = 1MHzVGS = 0VCrss0246810121416100.1110100Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 21. Gate Charge CharacteristicsFigure 22. Capacitance vs Drain to Source Voltage 10-ID, DRAIN CURRENT (A)4-IAS, AVALANCHE CURRENT(A)3TJ = 25oC8VGS = -10V6VGS = -4.5V2 42RθJC = 3.9C/WoTJ = 125oC10.11tAV, TIME IN AVALANCHE(ms)100255075100o125150 TC, CASE TEMPERATURE (C)Figure 23. Unclamped Inductive Switching Capability 2010-ID, DRAIN CURRENT (A)Figure 24. Maximum Continuous Drain Current vs Case Temperature 20000P(PK), PEAK TRANSIENT POWER (W)10000VGS = -10VFOR TEMPERATURESABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:100us1ms1000X–oTxRθJC = 3.9C/W-------------------I = I25 125SINGLE PULSE1THIS AREA ISLIMITED BY rds(on)SINGLE PULSETJ = MAX RATED10ms100msDCTX = 25oC 1000.10.051RθJC = 3.9oC/WTC = 25oC1010020010-61010-510-410-310-210-11-VDS, DRAIN to SOURCE VOLTAGE (V)t, PULSE WIDTH (s) Figure 25. Forward Bias Safe Operating AreaFigure 26. Single Pulse Maximum PowerDissipation FDD3510H Rev.C 8
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FDD3510H Dual N & P-Channel PowerTrench® MOSFETTypical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted21NORMALIZED THERMAL IMPEDANCE, ZθJCDUTY CYCLE-DESCENDING ORDER0.1D = 0.5 0.2 0.1 0.05 0.02 0.01PDMt1t2NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJC x RθJC + TC0.01SINGLE PULSERθJC = 3.9C/Wo0.001-61010-510-410-310-210-11t, RECTANGULAR PULSE DURATION (s)Figure 27. Transient Thermal Response Curve21NORMALIZED THERMAL IMPEDANCE, ZθJADUTY CYCLE-DESCENDING ORDER0.1D = 0.5 0.2 0.1 0.05 0.02 0.01SINGLE PULSERθJA = 96C/W(Note 1b)oPDM0.01t1t2NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJA x RθJA + TA0.001-41010-310-210-11101001000t, RECTANGULAR PULSE DURATION (sec) Figure 28. Transient Thermal Response CurveFDD3510H Rev.C 9
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Preliminary Datasheet
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.ACEx®FPS™PDP-SPM™The Power Franchise®Build it Now™F-PFS™Power-SPM™CorePLUS™FRFET®PowerTrench®CorePOWER™Global Power ResourceSMProgrammable Active Droop™TinyBoost™CROSSVOLT™Green FPS™QFET®TinyBuck™CTL™Green FPS™ e-Series™QS™TinyLogic®Current Transfer Logic™GTO™Quiet Series™TINYOPTO™EcoSPARK®IntelliMAX™RapidConfigure™TinyPower™EfficentMax™ISOPLANAR™Saving our world 1mW at a time™TinyPWM™EZSWITCH™ *MegaBuck™SmartMax™TinyWire™ ™MICROCOUPLER™SMART START™µSerDes™®MicroFET™SPM®MicroPak™STEALTH™Fairchild®MillerDrive™SuperFET™UHC®Fairchild Semiconductor®MotionMax™SuperSOT™-3Ultra FRFET™FACT Quiet Series™Motion-SPM™SuperSOT™-6UniFET™FACT®OPTOLOGIC®SuperSOT™-8VCX™FAST®OPTOPLANAR®SuperMOS™VisualMax™FastvCore™®®FlashWriter® ** EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, 2.A critical component in any component of a life support, (a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness. in the labeling, can be reasonably expected to result in a significant injury of the user.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data; supplementary data will be pub-PreliminaryFirst Productionlished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification NeededFull ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. ObsoleteNot In ProductionThis datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.Rev. I34FDD3510H Rev.C10www.fairchildsemi.com
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
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FAIRCHILDFDD3510H
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