NJG1101F
WIDE BAND AGC AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION
NJG1101F is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 850MHz from 2.5GHz. NJG1101F is a variable gain amplifier with 40 dB dynamic range and exhibits low current consumption. MTP6 package is adopted.nFEATURES
lSingle and low voltage operation
lLow current consumptionlSmall signal gain
lWide gain control range
lPout at 1dB gain compression pointlPackage
nPIN CONFIGURATION
nPACKAGE OUTLINE
VDD=+3.0V typ.IDD=10mA typ.
18dB typ. @f=1.5GHz
(f=0.85~2.5GHz @3dB down)40dB typ. @VCONT=+0.1~+2.0V+1.5dBm typ. @f=1.5GHz
MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm)
- 1 -
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NJG1101F
nABSOLUTE MAXIMUM RATINGS
PARAMETERDrain Voltage
Gain Control VoltageInput Power
Power Dissipation
Operating TemperatureStorage Temperature
SYMBOLCONDITIONSVDDVCONTVDD=3VPinVDD=3V, VCONT=2VPDToprTstg
(Ta=+25°C, Zs=Zl=50Ω) RATINGSUNITS
6V3V10dBm300mW-40~+85°C-55~+150
°C
nELECTRICAL CHARACTERISTICS1 (Wide band: Measured at TEST CIRCUIT 1)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSOperating FrequencyfreqVDD=3.0V0.851.52.5GHz
Drain VoltageOperating CurrentSmall Signal GainGain FlatnessGain ControlRange
Pout at 1dB GainCompression pointAdjacent ChannelLeakage Power(PDC Regulation)
VDDIDDGainGflatGcontP-1dBPacp
VDD=3.0V, VCONT=2V,Pout=-10dBm
VDD=3.0V, VCONT=2V,Pout=-10dBm, f=1.5GHz
VDD=3.0V, VCONT=2V, Pin=-25dBmf=0.85~2.5GHz
VDD=3.0V, VCONT=0.1~2.0V,Pin=-25dBm, f=1.5GHzVDD=3.0V, VCONT=2V, f=1.5GHzVDD=3.0V, VCONT=2V,Pout=-10dBm, f=1.5GHz
Offset=50kHz, Pin ; π/4 DQPSK
2.7-15.5-35--3.01018340+1.5-68
5.01321----VmAdBdBdBdBmdBc
- 2 -
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NJG1101F
nELECTRICAL CHARACTERISTICS 2 (800MHz Band: Measured at TEST CIRCUIT 2)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Operating FrequencyDrain VoltageOperating CurrentSmall Signal GainGain FlatnessGain ControlRange
Pout at 1dB GainCompression pointAdjacent ChannelLeakage Power(PDC Regulation)Input VSWROutput VSWR
freqVDDIDDGainGflatGcontP-1dBPacpVSWRiVSWRo
VDD=3.0V, VCONT=2V,Pout=-10dBm
VDD=3.0V, VCONT=2V,Pout=-10dBm, f=1.5GHzVDD=3.0V, VCONT=2V,
Pin=-25dBm, f=0.85~2.5GHzVDD=3.0V, VCONT=0.1~2.0V,Pin=-25dBm, f=1.5GHzVDD=3.0V, VCONT=2V, f=1.5GHzVDD=3.0V, VCONT=2V,Pout=-10dBm, f=1.5GHz
offset=50kHz, Pin ; π/4 DQPSKVDD=3.0V, VCONT=2V, f=1.5GHzVDD=3.0V, VCONT=2V, f=1.5GHzVDD=3.0V
8502.7-15.5-35----9383.010180.540+1.5-681.81.5
9605.01321------MHzVmAdBdBdBdBmdBc
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NJG1101F
nELECTRICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GH: Measured at TEST CIRCUIT 2)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSOperating Frequency 1Operating Frequency 2Drain VoltageOperating CurrentSmall Signal GainGain Flatness 1Gain Flatness 2Gain ControlRange
Pout at 1dB Gain
Compression point 1Pout at 1dB Gain
Compression point 2Adjacent Channel Leakage Power 1(PDC Regulation)Adjacent Channel Leakage Power 2(PDC Regulation)Input VSWROutput VSWR
freq1freq2VDDIDDGainGflat1Gflat2GcontP-1dB1P-1dB2Pacp1Pacp2VSWRiVSWRo
VDD=3.0V, VCONT=2V,Pout=-10dBm
VDD=3.0V, VCONT=2V,Pout=-10dBm, f=1.5GHzVDD=3.0V, VCONT=2V,
Pin=-25dBm, f=1429~1453MHzVDD=3.0V, VCONT=2V,
Pin=-25dBm, f=1800~1920MHzVDD=3.0V, VCONT=0.1~2.0V,Pin=-25dBm
VDD=3.0V, VCONT=2Vf=1429~1453MHzVDD=3.0V, VCONT=2Vf=1800~1920MHzVDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1441MHz
offset=50kHz, Pin ; π/4 DQPSKVDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1900MHz
offset=50kHz, Pin ; π/4 DQPSKVDD=3.0V, VCONT=2VVDD=3.0V, VCONT=2VVDD=3.0VVDD=3.0V
1429144114531800190019202.7-15.5--35---3.010180.50.540+1.5+1.0-68
5.01321------MHzMHzVmAdBdBdBdBdBmdBmdBc
---
-701.81.5
---
dBc
- 4 -
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NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
S21,S11,S22,S12 vs. FREQUENCY
20
S2110S21,S11,S22 (dB)-20
(VDD=3V, Vcont=2V)
-10
20100
S12 (dB)0
S12-10
S11-20
S22-300.5
-60
1
1.52Frequency (GHz)
2.5
3-50-40-30
Gain (dB)-10-20-30-40-500.5
Vcont=2.0V1.2V1.0V0.5V0.3V0.2V0.1V0.0VGAIN vs. FREQUENCY
(VDD=3V)
1
1.52Frequency (GHz)
2.53
GAIN, NF vs. FREQUENCY
(V=3V, V
20
Gain15
6
15
DD
cont
GAIN, NF vs. FREQUENCY
=2V)
7
20
Gain6
(V=4.5V, V
DDcont=3V)
7
Gain (dB)Gain (dB)NF (dB)105105
5454
00.5
NF1
1.5
2
2.5
3
3
00.5
NF1
1.5
2
2.5
3
3
Frequency (GHz)Frequency (GHz)
INPUT VSWR vs. FREQUENCY
(V=3V)
765Input VSWR43210.5
DDOUTPUT VSWR vs. FREQUENCY
(V=3V)
3.5
DD3
VVcontcont=2.0V1.0V=2.0VOutput VSWR2.5
0.1V1.0V0.1V0.1V1.0V2.0V20.1V1.0V2.0V1.5
1
1.52Freqency (GHz)
2.53
10.5
1
1.52Freqency (GHz)
2.53
NF (dB)- 5 -
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NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
I vs. V
DD
DD
GAIN, I vs. Vcont (Variable Gain)
(V
cont
=V-1V)
DD
DD
12
2010
(VDD=3V, Pin=-25dBm)
Gain f=1.5GHz13121110987IDD (mA)I (mA)DD11
0Gain (dB)I (mA)2.5GHz-10-20
9
-30
8
-40
0
0.5
V1
cont
2.5GHz10
DDIDD1.5GHz23
4VDD (V)
56
1.5
(V)
2
OUTPUT POWER, I vs. INPUT POWER
DD
OUTPUT POWER, I vs. INPUT POWER
DD
(VDD=3V, Vcont=2V, f=1.5GHz)
10
13
(V=3V, V
DDcont=2V, f=2.5GHz)
13
10
Output Power (dBm)Output PowerIDD (mA)P-1dB+1.4dBmOutput Power (dBm)512
5
Output Power0
P-1dB+1.0dBm12
011
11
-5
IDD10
-5
IDD10
-10
-30-25-20-15-10-50
9
-10
-30-25-20-15-10-50
9
Input Power (dBm)
Input Power (dBm)
GAIN vs. Vcont
2010
4.5V0-10-20-30-40
3V-20
(f=1.5GHz)
20
GAIN vs. Vcont
(f=2.5GHz)
V=4.5VDD10
V=4.5VDDGain (dB)DDGain (dB)V=3V0
4.5VV=3VDD-10
3V0123
cont
45
-30
0123
cont
45
V (V)V (V)
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NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
- 7 -
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NJG1101F
nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2)
GAIN vs. FREQUENCY
(VDD=3V)
2010
1.5V0Gain (dB)-10-20
0.1V-30
950MHz-400.5
1
1.5
2
2.5
3
-30
Frequency (GHz)
-20Gain (dB)1.0V0.5V0
VcontGAIN vs. V
20
=2.0V10
cont
(V=3V, f=938MHz)
DD
-10
00.51
V
1.5
cont
22.53
(V)
INPUT VSWR vs. FREQUENCY
(V=3V)
5
DDOUTPUT VSWR vs. FREQUENCY
(V=3V)
5
DD4
950MHzInput VSWR0.1VOutput VSWR4
950MHz3
3Vcont=2.0V0.1V1.0V1.0V2
2
Vcont=2.0V10.6
0.70.80.911.11.2
10.6
0.70.80.911.11.2
Frequency (GHz)Frequency (GHz)
OUTPUT POWER, I vs. INPUT POWER
DD
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
(V=3V, V
DD
cont
(VDD=3V, Vcont=2V, f=938MHz)
PDC800MHzAdjacent Channel Leakage Power (dBc)10
13
-40
=2V, f=938MHz, offset=50kHz)
20
Output PowerIDD (mA)P-1dB+2.1dBm0
11
ACP-60
10
-5
Idd10-70
RMS Vector Error-80
5
-10
-30-25-20-15-10-50
9
-10-505
010
Input Power (dBm)Output Power (dBm)
- 8 -
RMS Vector Error (%)Output Power (dBm)512-5015
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NJG1101F
nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2)
ACP, RMS VECTOR ERROR vs. Vcont
(V=3V, Input Power=-25dBm, f=938MHz, offset=50kHz)
DD
ACP, RMS VECTOR ERROR vs. Vcont
20
(VDD=3V, Output Power=-10dBm, f=938MHz, offset=50kHz)PDC800MHzAdjacent Channel Leakage Power (dBc)-40
20
PDC800MHzAdjacent Channel Leakage Power (dBc)-40
RMS Vector Error (%)-6010
-6010
-705
-705
-80
00.51Vcont (V)
1.52
0
-80
00.51Vcont (V)
1.52
0
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band : Measured on TEST CIRCUIT 2)
GAIN vs. FREQUENCY
(V=3V)
20
V100Gain (dB)0.5V-10-20-30
1.5GHz-400.520
1.9GHz2
DD
contDDGAIN vs. V
20
cont
(V=3V, f=1441MHz)
DD
=2.0V1.5V1.0VGain (dB)10
0
-10
0.1V-20
GAIN vs. V
11.52.53
-30
contFrequency (GHz)
(V=3V, f=1.9GHz)
INPUT VSWR vs. FREQUENCYV (V)
cont
00.511.522.53
5
(VDD=3V)
10
4Input VSWRGain (dB)0
1.5GHz1.9GHz3
1.0V2
Vcont=2.0V0.1V-10
-20
-30
00.51
V
1.5
cont
22.53
10.5
11.522.53
(V)Frequency (GHz)
- 9 -
RMS Vector Error (%)-5015
-5015
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NJG1101F
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2)
OUTPUT VSWR vs. FREQUENCY
(V=3V)
5
DDOUTPUT POWER, IDD vs. INPUT POWER
(V=3V, V
DDcont=2V, f=1441MHz)
13
10
Output Power (dBm)4Output VSWR1.5GHz1.9GHz3
5
Output PowerP-1dB+1.1dBm12
V2
cont=2.0V1.0V-5
Idd10
10.5
11.522.53
-10
-30-25-20-15-10-50
9
Frequency (GHz)
Input Power (dBm)
OUTPUT POWER, IDD vs. INPUT POWER
(V=3V, V
DD
cont
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
(V=3V, V
DDcont=2V, f=1.9GHz)
PDC1.5GHzAdjacent Channel Leakage Power (dBc)13
-40
=2V, f=1441MHz, offset=50kHz)
20
10
Output PowerP-1dB+1.0dBmI (mA)ACP-60
10
-5
Idd10
DD011
-70
RMS Vector Error-80
5
-10
-30-25-20-15-10-50
9
-10-505
010
Input Power (dBm)Output Power (dBm)
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
(VDD=3V, Vcont=2V, f=1.9GHz, offset=600kHz)
PHS1.9GHzAdjacent Channel Leakage Power (dBc)-40
ACPRMS Vector Error (%)-50
1520
ACP, RMS VECTOR ERROR vs. Vcont
(VDD=3V, Input Power=-25dBm, f=1441MHz, offset=50kHz)
-40PDC1.5GHzAdjacent Channel Leakage Power (dBc)20
-6010
-6010
-70
RMS Vector Error-80
5
-705
-10-505
010
-80
00.51Vcont (V)
1.52
0
Output Power (dBm)
- 10 -
RMS Vector Error (%)-5015
RMS Vector Error (%)Output Power (dBm)512-5015
DD0.1V011
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NJG1101F
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2)
ACP, RMS VECTOR ERROR vs. VcontACP, RMS VECTOR ERROR vs. Vcont
(VDD=3V, Output Power=-10dBm, f=1441MHz, offset=50kHz)PDC1.5GHzAdjacent Channel Leakage Power (dBc)-40
20
(VDD=3V, Input Power=-25dBm, f=1.9GHz, offset=600kHz)
-40PHS1.9GHzAdjacent Channel Leakage Power (dBc)20
RMS Vector Error (%)-5015
-6010
-6010
-705
-705
-80
00.5
V
1
cont
1.5
(V)
2
0
-80
00.51Vcont (V)
1.52
0
ACP, RMS VECTOR ERROR vs. Vcont
(V=3V, Output Power=-10dBm, f=1.9GHz, offset=600kHz)
DD
PHS1.9GHzAdjacent Channel Leakage Power (dBc)-4020
-6010
-705
-80
00.5
V
1
cont
1.5
(V)
2
0
RMS Vector Error (%)-5015
- 11 -
RMS Vector Error (%)-5015
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NJG1101F
nAPPLICATION CIRCUIT
VDD
6RF IN
1ZO=50ΩATTAMPATTAMP4RF OUTZO=50Ω3ZS=50Ω25VCONTZL=50Ω- 12 -
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NJG1101F
nTEST CIRCUIT1 (WIDE BAND)
C3C4
39pF1000pF
VDD 3VC139pFRF IN(TOP VIEW)123654L115nHC239pFRF OUTVCONT0~2VC539pFnTEST CIRCUIT2 (PDC 800MHz, PDC 1.5GHz, PHS 1.9GHz)
C3C4
39pF1000pF
VDD 3VC1RRF INL2R(TOP VIEW)123654L115nHC2RRF OUTVCONT0~2VC539pFRC2L2C1
PDC800MHz100pF10nH100pFPDC1.5GHz/PHS1.9GHz10pF1.5nH10pF
NOTE
- 13 -
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NJG1101F
nRECOMMENDED PCB DESIGN
Notes:
[1]Following chip capacitors work as bypass capacitor, and should be connected tocorresponding terminals and the ground plane as close as possible. ¬C3 -C4 ®C5
[2]Following chip capacitors are necessary to block DC bias. ¬C1 -C2[3]Parts list
Parts IDC1~C5L1~L2
Comment
MURATA GRM36 SeriesTAIYO-YUDEN HK1608 Series
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NJG1101F
nPACKAGE OUTLINE (MTP6)
Lead material
Lead surface finishMolding materialUNITWeight: Copper
: Solder plating: Epoxy resin: mm: 14mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handlewith care to avoid these damages.
[CAUTION]The specifications on this databook are onlygiven for information , without any guaranteeas regards either mistakes or omissions. Theapplication circuits in this databook aredescribed only to show representative usagesof the product and not intended for theguarantee or permission of any right includingthe industrial rights.- 15 -
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